
Known Good Die
PB6400
SiC KGD Die Handler
Features

Excellent Scalability
Modular design with loading
Dynamic, Static and UIS Tests
Static test 2000V/200A
Multi-site Parallel Testing
Supports up to four independent test sites, each configurable with unique test conditions and parameters
Precision Temperature Control
Room temperature ~ 185 ℃,
Airtight Socket Design
Supports nitrogen gas for arcing protection with integrated pressure monitoring
6s AOI
Micro-scale visible defect inspection down to 12µm
High Throughput
Up to 900 UPH @ 1s test time for Known Good Die
Powerful Software
Supports data MAP and bin sorting| Category | Parameter | Specification | Remark |
| Basic Parameters | Die Size | 3*3mm-8*8mm | |
| Die Thickness | 100-400μm | ||
| P&P Accuracy | ±30μm | ||
| Temperature System | Temperature Range |
Room Temperature ~185℃ | |
| Resolution | 0.1℃ | ||
| Tolerance | ≤±3℃ | ||
| Vision Inspection System |
Inspection Accuracy | ≥12μm | Grayscale contrast ratio > 40 |
| Defect | Top/Bottom: Scratch, Dirt, Contamination, Burn Mark, Chipped, Defect | ||
| Side: Chipped | |||
| Stability | MTBF | >168H | |
| MTBA | >2H | ||
| MTTA | 5 min | ||
| MTTR | <30 min | ||
| Drop Rate | ≤0.01% | Due to P&P | |
| Fragmentation Rate | ≤0.01% | ||
| Probe Depth | ≤2μm | ||
| Drain Kelvin | ≤2Ω | TiNiAg material | |
| Efficiency | Single Die | ≥500 UPH | Test time ≤1s |
| Dual Die | ≥900 UPH | Test time ≤1s |
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