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Low Leakage Switch Matrix

RM1010-LLC

Low Leakage Relay Matrix Mainframe


RM1010-LLC is a 4-slot semiconductor switch matrix that can meet high-speed semiconductor test applications by integrating S3022F benchtop or S2012C PXle SMU. Easy-to-use GUI helps to speed up the development of new test functions and simplify system integration. It supports traditional SCPI commands, enabling easy and fast programming of test code. It can support multi-machine parallel connection to achieve test efficiency improvement and cost reduction.

Features

  • Multi-channel Flexible Measurement

    Supports for 2-channel low leakage current input
    Supports 14 input channels and 48 output channels
  • Low Leakage Current

    The minimum achievable leakage current <100 fA
  • Rapid Measurement

    The establishment time of weak current <3.5s
    (The time from the start of 10V voltage input to the current < 400fA)
  • High Relay Contact Life

    The switch life >10^8 times
  • 10MHz BW

    Optimize the transmission bandwidth of C-V and HF channels
    Reduce the high-frequency attenuation of the line
  • Supports 2 Control Methods

    Run the upper computer GUI software on the PC
    Standard commands SCPI through programmable instruments

Functions and Advantages

  • Precise, Consistent Results

    Supports 2 channels of low leakage current input, the whole machine supports 14 inputs and 48 outputs.
    Can be used with high-precision SMUs (such as S2036H, S2016C, etc.), with a leakage current of less than 100 fA.

Specification



Input Channels
2(Low Leakage I-V Port)
6(General I-V Port)
2(C-V Port)
2(DMM Port)
2(PGU Port)
Ouput Channels 12/24/36/48
Max. Current Rating 1 A
Max. Voltage Rating 200V(Channel to Ground)
300V (Channel to Channel)


Close Ch Residual R
0.6 Ω(Low Leakage I-V Port)
1.0 Ω(General I-V Port)
1.0 Ω(C-V, HF Port)


Ch Isolation R[1]
1013 Ω(Low Leakage I-V Port)
1012 Ω(General I-V Port)
109 Ω(C-V, HF Port)

Typical Data

Offset Current <100fA(Low Leakage I-V Port)
<1000pA(General I-V Port)


Offset Voltage, Electro Motive Force (EMF) at 5 min
<80μV(Low Leakage I-V Port)
<110μV(General I-V Port)
<110μV(C-V, HF Port)
Channel Crosstalk Capacitance <0.3pF/CH

Note:
[1] Insulation resistance test environment: 23℃± 5℃, 5% to 60% RH


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Details
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