With the booming development of emerging fields such as artificial intelligence, new energy vehicles, and the Internet of Things, wide bandgap semiconductor materials, especially silicon carbide (SiC) and gallium nitride (GaN), have shown a rapid development trend due to their excellent performance. In order to deeply analyze and accurately measure various parameters and characteristics of these advanced devices, thereby enhancing their efficiency and reliability, Semight has recently launched a new 10x24 High-Voltage, Low-Leakage Switch Matrix, the RM1013-HV, which can meet the measurement requirements of 3000V high voltage with an offset current of less than 300pA, enabling various high-precision semiconductor characterization tests.

01, High-Precision Automatic Measurement

Semight has recently introduced the 10x24 High-Voltage, Low-Leakage Switch Matrix, namely RM1013-HV. It is capable of fulfilling the 3000V high voltage measurement requirements while maintaining a bias current lower than 300pA. Moreover, it is suitable for use in combination with high-precision SMUs to conduct diverse characterization tests of power semiconductors.

RM1013-HV High Voltage Low Leakage Switch Matrix block diagram

Multi-channel high-voltage flexible measurement

It provides support for two high-voltage and low leakage current channel inputs. Moreover, the whole device supports ten inputs and twenty-four outputs, which can enhance the flexibility of parameter measurement and save costs and time. Additionally, it can be combined with measurement devices like HVSMU, SMU, CMU and DMM to build an efficient automatic testing system for semiconductor parameters.

High voltage low leakage current

The low leakage current of the matrix is less than 300pA @ 3000V (high voltage low leakage current channel). It can be combined with high-precision SMUs (such as the S3030F, etc.) to achieve high-precision automatic measurement.

Support for rapid measurement

The switch matrix has an impressive feature that its current establishment time is less than 10 seconds. Specifically, this refers to the time interval from the start of 1V voltage input until the current becomes less than 300fA. Moreover, it can be used in conjunction with SMUs (such as the S3030F, S2016C, etc.) to achieve rapid measurement of weak current signals, thereby facilitating efficient testing processes in relevant applications.

High relay contact life

The switch matrix employs relays fabricated from world-class reed switches, which not only possess a remarkable mechanical lifespan of up to 10^8 times but also offer excellent electrical performance and high reliability in various operating conditions.

10MHz bandwidth

The switch matrix maximizes the transmission bandwidth of the C-V and DMM channels, effectively meeting the requirements of high-speed testing and ensuring smooth and efficient data transmission during the process.

Control connection
It supports direct connection to RM1013-HV via USB cable or LAN for controlling the opening and closing of channels. Moreover, it can be controlled either through programming (by using SCPI commands) or via a GUI interface. The GUI interface is highly intuitive and user-friendly, which enables users to easily configure the closure and disconnection of channels for measurements, thus facilitating the operation process significantly.

Matrix control software GUI

02, Channel Configuration

03, Typical Application Scenarios

Power semiconductor parametric test

The High Voltage Low Leakage Switch Matrix can seamlessly integrate with various instruments including source meters, high-voltage source meters, LCR meters, and digital multimeters to form a powerful automated test system for power device I-V and C-V parameters. This system is capable of efficiently measuring the I-V and C-V characteristic parameters of multiple devices such as MOSFETs, IGBTs, BJTs, diodes, capacitors, and resistors. For instance, it can measure parameters like the BVdss, Off-leak/Id(off)-Vds, and Id-Vds of MOSFETs. Through programmed control, different devices and measurement items can be automatically switched between connection paths, allowing the completion of measurements in one operation.

Matrix path switching diagram

In the testing of semiconductor power devices, it is common practice to measure high-voltage capacitance parameters like Ciss/Coss/Crss. However, the switching between high-voltage capacitance measurement and I-V measurement has always posed a challenge in the testing process. Fortunately, the high-voltage switching matrix is fitted with a switchable high-voltage capacitance measurement bias circuit (HV Bias Tee), which can effectively address this problem by enabling smooth transitions between these two different types of measurements and ensuring accurate results for both.

SiC MOSFET capacitance characteristics

Equivalent model of capacitor