Date:2026.03.20
Visits:308
01、IntroductionWith advances in semiconductor process technologies, the market requires instrument manufacturers to provide faster and more precise solutions for arbitrary linear waveform generation and fast measurement. Today, we are proud to launch the S3033C, a high-end PXIe modular waveform generator and fast measurement unit.
With its exceptional technical performance and innovative design, this product provides new solutions for the field of semiconductor device transient testing. Particularly in cutting-edge fields such as NBTI/PBTI reliability characterization, RTN noise analysis, and the R&D of emerging memories including RRAM, MRAM, and PCRAM, the S3033C helps researchers and engineers overcome testing bottlenecks and accelerate the innovation process.
02、Product Benefits
Waveform Accuracy: ±(3% + 2 ns)
Supported Waveform Types: Triangle, sine, square, pulse, etc.
Arbitrary Linear Waveform Generation: The S3033C is equipped with a sequence memory capable of constructing output sequences containing up to 512 waveforms. Each waveform sequence can be composed of up to 2048 waveform vectors.
Voltage Range: Vpp 20 V (−10 V to +10 V, −20 V to 0 V, 0 V to +20 V)
Current Range: ±100 mA
Voltage and current can be measured simultaneously. A single module enables easy Fast BTI testing, Pulsed IV testing, and RTN testing.
Maximum Sampling Rate: 500 MSa/s
Maximum Memory Depth: 64 Mpoints per channel
Best Voltage Measurement Resolution: 680 μV
Best Voltage Measurement Accuracy: ±5 mV
Best Current Measurement Resolution: 0.13 nA
Best Current Measurement Accuracy: ±2 nA
PG Mode Rise/Fall Time: 30 ns (0 V → 10 V, open)
FIV Mode Rise/Fall Time: 80 ns (0 V → 10 V, 100 Ω, 100 mA)
Based on the PXIe protocol, it supports multi-module cascading expansion and hardware trigger synchronization. A single 18-slot chassis can integrate up to five S3033C modules.
It can be hybrid-integrated with other PXIe modular instruments to create a custom semiconductor parameter test and analysis system.
Controlled via standard SCPI commands, it provides programming interfaces for C#, Python, C/C++, and LabVIEW, significantly simplifying software integration in test systems.
As process nodes advance to 28 nm and below, Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) have become core reliability issues affecting chip lifetime. Meanwhile, testing faces the following challenges:
Inaccurate Measurement: Conventional DC testing methods are too slow; after stress removal, the threshold voltage (Vth) recovers rapidly (fast recovery effect), resulting in measurements that reflect a "survivorship bias" rather than the true degradation.
Incomplete Measurement: Actual chips operate under AC conditions, yet conventional instruments struggle to simulate realistic AC stress conditions.
With 2 ns time resolution and a 500 MSa/s sampling rate, the S3033C leverages hardware synchronization to complete threshold voltage measurements within 1 μs after stress removal, accurately capturing the true degradation before the fast recovery effect occurs. It also supports arbitrary waveform generation for AC stress to simulate the real operating conditions of chips.
Random Telegraph Noise (RTN) in CMOS image sensors can cause erroneous white spots to appear in areas that should be black. As device dimensions shrink, a single defect can cause significant current fluctuations, making the RTN problem increasingly severe. Meanwhile, test solutions face the following challenges:
Complex Conventional Setup: Requires multiple instruments such as low-noise power supplies, transformers and oscilloscopes, resulting in difficult calibration and poor result consistency.
High Noise Interference: Random noise introduced by cascading multiple instruments can easily lead to measurement errors.
Narrow Capture Range: Unable to simultaneously cover the wide frequency range from low to high frequencies.
A single S3033C, combined with its built-in RSU module, can independently perform RTN measurements without any additional equipment. Its ultra-low noise floor ensures that weak signals are not overwhelmed, and high-speed sampling at 500 MSa/s covers a wide frequency range from < 1 Hz to the MHz band.
RRAM, MRAM, PCRAM and other emerging non-volatile memories are research hotspots in both academia and industry. The core characteristic of these devices is the rapid, reversible change in resistance under nanosecond-scale pulses. Testing solutions must address the following technical challenges:
Precise Pulse Control: Programming/erasing operations require pulse sequences with specific amplitude, width, and shape.
Synchronous Measurement: Device state must be read immediately after pulse application to observe resistance variations.
Low Iteration Efficiency: Conventional test solutions lack flexibility in pulse parameter adjustment, resulting in low R&D efficiency.
The S3033C can generate arbitrarily complex pulse sequences for programming/erasing operations and synchronously measure the device's transient response to evaluate its switching speed and endurance. Its 2 ns programmable resolution enables fine-tuning of pulse parameters.
We understand that using such high-precision instruments requires a certain level of expertise. Therefore, we provide:
Ready-to-use measurement software: Built-in test algorithms for common semiconductor devices to reduce your setup time.
Comprehensive application notes: Step-by-step guidance and data analysis recommendations for common measurement scenarios and issues.
Professional technical support: Our application engineering team stands ready to answer your specific questions regarding measurement configuration and data analysis.
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